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Updated: Oct 5, 2026

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
Direct observation of a Ti/Cu interface with atomic displacement under electron irradiation
S Ohta1, N Sakaguchi, T Shibayama
1JEOL Ltd, Musashino 3-1-2, Akishima 196-8558, Japan.
Unlabelled:
A Ti film was deposited onto a Cu substrate by means of a radio frequency magnetron sputtering
Method:
Cross-sectional thin foils for TEM observation were prepared using a focused ion beam. Electron irradiation was carried out using a high-resolution high-voltage electron microscope operated at 1.25 MV. The Cu/Ti interface of the foils was irradiated at 623 K. In-situ observation images during electron irradiation were recorded by a CCD camera with a digital video cassette. The (020)Cu plane on the Cu/Ti interface preferentially moved towards the Ti film with irradiation. Composition analysis of the diffused region showed that its composition corresponded to Ti3Cu2.
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