Layered rare-earth gallium antimonides REGaSb(2) (RE = La--Nd, Sm)

The ternary rare-earth gallium antimonides, REGaSb(2) (RE = La--Nd, Sm), have been synthesized through reaction of the elements. The structures of SmGaSb(2) (orthorhombic, space group D(5)(2)-C222(1), Z = 4, a = 4.3087(5) A, b = 22.093(4) A, c = 4.3319(4) A) and NdGaSb(2) (tetragonal, space group D(19)(4h)-I4(1)/amd, Z = 8, a = 4.3486(3) A, c = 44.579(8) A) have been determined by single-crystal X-ray diffraction. The SmGaSb(2)-type structure is adopted for RE = La and Sm, whereas the NdGaSb(2)-type structure is adopted for RE = Ce--Nd. The layered SmGaSb(2) and NdGaSb(2) structures are stacking variants of each other. In both structures, two-dimensional layers of composition (2)(infinity)[GaSb] are separated from square nets of Sb atoms [Sb] by RE atoms. Alternatively, the structures may be considered as resulting from the insertion of zigzag Ga chains between (2)(infinity)[RE Sb(2)] slabs. In SmGaSb(2), all of the Ga chains are parallel and the (2)(infinity)[SmSb(2)] layers are stacked in a ZrSi(2)-type arrangement. In NdGaSb(2), the Ga chains alternate in direction, resulting in a doubling of the long axis relative to SmGaSb(2), and the (2)(infinity)[NdSb(2)] layers are stacked in a Zr(3)Al(4)Si(5)-type arrangement. Extended Hückel band structure calculations are used to explain the bonding in the [GaSb(2)](3-) substructure.