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"Dip-Pen" nanolithography on semiconductor surfaces.

A Ivanisevic1, C A Mirkin

  • 1Department of Chemistry and Center for Nanofabrication and Molecular Self-Assembly, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA.

Journal of the American Chemical Society
|August 9, 2001
PubMed
Summary

Dip-Pen Nanolithography (DPN) successfully patterned silicon and gallium arsenide semiconductors with sub-100 nm organic features using hexamethyldisilazane ink. This breakthrough expands DPN capabilities to new electronic materials.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Surface Chemistry

Background:

  • Dip-Pen Nanolithography (DPN) is an AFM-based technique for depositing molecules onto surfaces.
  • DPN has been primarily limited to gold substrates using thiol-based inks.
  • Developing DPN for semiconductor materials is crucial for advanced nanoelectronic and biological applications.

Purpose of the Study:

  • To demonstrate the first application of DPN for direct organic patterning on silicon and gallium arsenide (GaAs) semiconductor surfaces.
  • To identify suitable inks and process parameters for DPN on semiconductors.
  • To enable the integration of organic and biological structures with semiconductor devices.

Main Methods:

  • Utilized Dip-Pen Nanolithography (DPN) with an atomic force microscopy (AFM) tip to deposit organic molecules.

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  • Employed hexamethyldisilazane (HMDS) as the ink for patterning on silicon and GaAs substrates.
  • Employed Lateral Force Microscopy (LFM) to characterize the patterned surfaces and differentiate between HMDS monolayers and the semiconductor substrate.

    • Main Results:

    • Achieved sub-100 nm organic pattern dimensions on silicon and GaAs surfaces.
    • Successfully used HMDS as an ink, demonstrating its compatibility with the DPN meniscus on these semiconductors.
    • Identified HMDS monolayers on oxidized semiconductor surfaces using LFM.
    • Determined that silazane inks are suitable, unlike incompatible trichlorosilanes that polymerize.

    Conclusions:

    • DPN can be effectively applied to pattern organic molecules on silicon and gallium arsenide semiconductors.
    • The selection of appropriate inks, such as HMDS, is critical for successful DPN on semiconductors.
    • This research expands the utility of DPN for interfacing organic/biological structures with electronically significant semiconductor materials.