Selective-resputtering-induced perpendicular magnetic anisotropy in amorphous TbFe films

Area of Science:

• Materials Science
• Condensed Matter Physics
• Thin Film Technology

Background:

• Amorphous TbFe films are investigated for their magnetic properties.
• Understanding the factors influencing magnetic anisotropy is crucial for device applications.
• Radio-frequency (rf) magnetron sputtering is a common technique for thin film deposition.

Purpose of the Study:

• To measure the perpendicular magnetic anisotropy energy in rf magnetron sputtered amorphous TbFe films.
• To investigate the relationship between magnetic anisotropy and pair-order anisotropy.
• To understand the role of surface adatom resputtering in film growth.

Main Methods:

• Thin film deposition using rf magnetron sputtering.
• Measurement of perpendicular magnetic anisotropy energy.
• Analysis of pair-order anisotropy induced by selective resputtering of surface adatoms.

Main Results:

• Perpendicular magnetic anisotropy energy increases exponentially with pair-order anisotropy.
• Selective resputtering of surface adatoms during film growth is identified as the key mechanism.
• A direct correlation was established between film growth dynamics and magnetic properties.

Conclusions:

• The study demonstrates a clear link between atomic-level surface processes and macroscopic magnetic properties.
• Pair-order anisotropy, influenced by adatom behavior, significantly enhances perpendicular magnetic anisotropy in TbFe films.
• This finding offers insights for tailoring magnetic properties in amorphous alloys through controlled sputtering processes.