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Porous silicon formation and electropolishing.

M Rauscher1, H Spohn

  • 1Laboratory of Atomic and Solid State Physics (LASSP), Clark Hall, Cornell University, Ithaca, New York 14853, USA.

Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics
|October 3, 2001
PubMed
Summary
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Electrochemical etching of silicon transitions from pore formation to electropolishing with increasing current. This shift is driven by changes in dissolution valence and current density, impacting interface stability.

Area of Science:

  • Materials Science
  • Electrochemistry
  • Semiconductor Physics

Background:

  • Electrochemical etching of silicon in hydrofluoric acid-based electrolytes can produce either porous silicon or electropolished surfaces.
  • The transition between these two regimes is critically dependent on the applied current density.

Purpose of the Study:

  • To model the electrochemical etching process of silicon.
  • To understand the transition from pore formation to electropolishing.
  • To investigate the factors influencing interface stability during etching.

Main Methods:

  • Modeling reactant and product transport in both silicon and electrolyte.
  • Applying law of mass-action-type boundary conditions at the semiconductor-electrolyte interface.
  • Analyzing the linear stability of a planar interface.

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Main Results:

  • Local etching rates are governed by local current density, which is modeled considering transport phenomena.
  • A change in the valence of the electrochemical dissolution reaction accompanies the transition from pore formation to electropolishing.
  • Interface stability is found to flip with increasing current density, influenced by valence changes or nonlinear boundary conditions.

Conclusions:

  • The study provides a model for silicon electrochemical etching, explaining the transition between porous and polished states.
  • Interface stability is sensitive to current density and reaction mechanisms.
  • Understanding these mechanisms is crucial for controlling silicon nanostructure fabrication.