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Negative resistance and local charge-density-wave dynamics.

H S van der Zant1, E Slot, S V Zaitsev-Zotov

  • 1Department of Applied Sciences and DIMES, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands.

Physical Review Letters
|October 3, 2001
PubMed
Summary
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Corrigendum: Numerical analysis of surface and edge states in slabs, stripes, rods and surface steps of topological insulators (2018<i>J. Phys.: Condens. Matter</i><b>30</b>485301).

Journal of physics. Condensed matter : an Institute of Physics journal·2018

Charge-density-wave (CDW) dynamics in NbSe(3) and o-TaS(3) reveal negative absolute resistance at low temperatures. This phenomenon arises from distinct forces acting on the CDW and quasiparticles due to potential differences.

Area of Science:

  • Condensed matter physics
  • Materials science

Background:

  • Charge-density waves (CDWs) are collective electronic phenomena in low-dimensional materials.
  • Understanding CDW dynamics is crucial for developing novel electronic devices.

Purpose of the Study:

  • To investigate charge-density-wave (CDW) dynamics on a submicron scale.
  • To explore the origins of negative absolute resistance in CDW sliding regimes.

Main Methods:

  • Utilized submicron-scale measurements in NbSe(3) and o-TaS(3) crystals.
  • Analyzed the CDW sliding regime at low temperatures.

Main Results:

  • Observed regions of negative absolute resistance in NbSe(3) and o-TaS(3).
  • Identified distinct forces on the deformed CDW (electric potential difference) and quasiparticles (electrochemical potential difference) as the cause.

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Conclusions:

  • The study elucidates the mechanism behind negative absolute resistance in CDW systems.
  • Findings contribute to the fundamental understanding of charge transport in materials exhibiting CDW phenomena.