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Updated: Oct 3, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Surface Chemistry of Prototypical Bulk II-VI and III-V Semiconductors and Implications for Chemical Sensing
1Departments of Chemistry and Chemical Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706.
No abstract available in PubMed .
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Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
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