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Related Experiment Videos

A model for phase noise generation in amplifiers.

T D Tomlin1, K Fynn, A Cantoni

  • 1Department of Electrical and Electronic Engineering, University of Western Australia, Nedlands. ttomlin@bigfoot.com

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
|January 22, 2002
PubMed
Summary

A new model predicts phase modulation (PM) and amplitude modulation (AM) noise in bipolar junction transistor (BJT) amplifiers. This model accurately forecasts noise behavior and its dependence on signal and transistor parameters.

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Area of Science:

  • Electronics
  • Solid-state physics
  • Signal processing

Background:

  • Bipolar junction transistor (BJT) amplifiers are crucial components in electronic circuits.
  • Understanding and predicting noise, specifically phase modulation (PM) and amplitude modulation (AM) noise, is essential for amplifier performance.
  • Existing models may not fully capture the complex noise characteristics within BJT amplifiers.

Purpose of the Study:

  • To develop and present a novel model for predicting PM and AM noise in BJT amplifiers.
  • To elucidate the dependence of phase noise on signal frequency and carrier offset.
  • To demonstrate the model's ability to explain noise shaping and functional dependencies on circuit and transistor parameters.

Main Methods:

  • Development of a theoretical model for PM and AM noise prediction in BJTs.

Related Experiment Videos

  • Analysis of the model's predictions regarding signal frequency dependence and noise shaping.
  • Experimental validation using common emitter (CE) amplifier configurations.

    • Main Results:

    • The presented model accurately predicts the dependence of phase noise on signal frequency at specific carrier offset frequencies.
    • The model successfully explains the noise shaping phenomenon around the signal frequency.
    • The model demonstrates a clear functional relationship with both transistor and circuit parameters.

    Conclusions:

    • The developed model provides a comprehensive framework for understanding and predicting noise in BJT amplifiers.
    • Experimental validation confirms the model's accuracy for PM noise in CE amplifiers within the 10-100 MHz range.
    • This work contributes to improved design and performance optimization of BJT-based circuits by enabling better noise management.