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Energy dissipation in atomic force microscopy and atomic loss processes.

P M Hoffmann1, S Jeffery, J B Pethica

  • 1Department of Physics, Wayne State University, 666 W. Hancock, Detroit, Michigan 48201, USA. hoffmann@physics.wayne.edu

Physical Review Letters
|January 22, 2002
PubMed
Summary
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Atomic scale dissipation was measured using an atomic force microscope. Dissipation in the noncontact regime is linked to atomic defects, while contact regime dissipation shows plasticity differences between silicon and copper surfaces.

Area of Science:

  • Nanomechanics
  • Atomic Manipulation
  • Surface Science

Background:

  • Atomic scale dissipation is crucial for understanding nanomechanics and atomic manipulation.
  • Previous methods lacked precision in measuring dissipation at fixed separations.

Purpose of the Study:

  • To present precise dissipation measurements at the atomic scale.
  • To investigate dynamic dissipation in the noncontact regime.
  • To analyze energy loss associated with nanoscale plasticity in the contact regime.

Main Methods:

  • Utilized a linearized, ultra-small amplitude atomic force microscope (AFM).
  • Enabled dissipation measurements at chosen, fixed tip-surface separations.
  • Characterized both noncontact and contact regimes of tip-surface interaction.

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Main Results:

  • Noncontact dynamic dissipation measured at 10-100 meV per cycle, attributed to bistable atomic defects.
  • Observed DC hysteresis in the contact regime, indicative of nanoscale plasticity.
  • Hysteretic energy loss was significantly higher (one order of magnitude) for silicon surfaces compared to copper.

Conclusions:

  • Bistable atomic defects are a likely source of dissipation in the noncontact regime.
  • Nanoscale plasticity significantly contributes to energy dissipation in the contact regime.
  • Surface material properties (e.g., silicon vs. copper) strongly influence contact regime dissipation.