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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Measurements of electron beam damage for organic crystals in a high voltage electron microscope with image plates
Tamotsu Ohno1, Masaya Sengoku, Tatsuo Arii
1Department of Physics, Aichi Medical University, Nagakute-cho, Aichi-ken, Japan. ohno@aichi-med-u.ac.jp
Abstract:
The critical dose for extinction of the diffraction pattern from behenic acid monolayer crystals increased with increasing accelerating voltages. The mean values at 114, 500 and 1000kV were 0.6, 1.8 and 2.2 electrons/A(2), respectively. The critical dose at 500-1000kV is three or more times as large as that at 114kV. Considering this with the recent measured value of the detective quantum efficiency of the image plate, 0.5 at 500kV and 0.4 at 1000kV, 1.5 times as much information can be collected from a crystal at 500-1000kV as at 114kV. Therefore, the combined use of high voltage electron microscopy and image plate detectors offers a significant improvement over conventional electron microscopy approaches for the study of radiation sensitive organic molecule crystals.
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