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Updated: Aug 1, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Dominance of Fermi-surface holes in p-type tunneling
Y C Chung1, T Reker, A R Glanfield
1Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom.
Abstract:
In-plane uniaxial stress is used to tune continuously the mixing between the heavy-hole (HH) and light-hole (LH) states in a p-type double-barrier structure. The LH1 and HH2 resonant tunneling peaks shift at almost the same rate with stress, in contrast to the corresponding exciton peaks observed by photoreflectance, which exhibit a strong Fano-related anticrossing. Comparison between the observed shifts and a four-band k x p calculation of the state energies in the well provides the first experimental proof that the flow of holes through off-zone center states dominates the resonant tunneling current in p-type structures.
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