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Individual domain wall resistance in submicron ferromagnetic structures
R Danneau1, P Warin, J P Attané
1Service de Physique de l'Etat Condensé, CEA Orme des Merisiers, F-91191 Gif-Sur-Yvette, France.
Physical Review Letters
|April 17, 2002
Summary
Domain wall resistance in FePd nanostructures was quantified using transport and magnetic imaging. This magnetoresistance effect allows for direct counting of domain walls, enabling measurements of magnetic configuration changes.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Domain walls in magnetic nanostructures influence their electrical and magnetic properties.
- Understanding domain wall resistance is crucial for developing advanced magnetic devices.
Purpose of the Study:
- To quantify the intrinsic resistance of individual domain walls in FePd nanostructures.
- To explore the potential of domain wall resistance for nanoscale magnetic measurements.
Main Methods:
- Combined transport measurements and magnetic imaging techniques.
- Fabrication of FePd nanostructures for precise measurements.
Main Results:
- The intrinsic domain wall resistance was found to be positive and consistent with spin scattering models.
- Nanoscale magnetoresistance enabled direct counting of domain walls.
- Changes in magnetic configuration of submicron stripes were measured under an applied magnetic field.
Conclusions:
- The study successfully quantified domain wall resistance in FePd nanostructures.
- Domain wall resistance serves as a viable method for counting domain walls and probing magnetic configurations at the nanoscale.