Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Videos

Characterization of nitride thin films by electron backscatter diffraction.

C Trager-Cowan1, F Sweeney, J Hastie

  • 1Department of Physics and Applied Physics, University of Strathclyde, Glasgow, UK. cacs19@strath.ac.uk

Journal of Microscopy
|May 9, 2002
PubMed
Summary
This summary is machine-generated.

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Nutrition in Infants with Orofacial Clefts: An Assessment of Feeding Practices and Factors Affecting Feeding.

Nigerian journal of clinical practice·2026
Same author

[Minimally invasive staged surgical treatment of acute severe pancreatitis in multi-field emergency hospital].

Khirurgiia·2026
Same author

[Clinical and functional effectiveness of surgical treatment of full-thickness macular holes with preservation of the intact papillomacular zone of the retina].

Vestnik oftalmologii·2025
Same author

THE HEPATITIS B AND HEPATITIS C VIRUSES SEROPREVALENCE AMONG BLOOD DONORS IN AL-DAMAZIN STATE, SUDAN: A THREE-YEAR RETROSPECTIVE STUDY.

Georgian medical news·2025
Same author

[Treatment of patients with obstructive jaundice in the flagship center].

Khirurgiia·2025
Same author

[Bilioduodenal stenting with fully covered self-expandable stent with anti-migration flaps in patients with benign obstructive jaundice].

Khirurgiia·2025
Same journal

In operando imaging of the space-charge region in a 4H-SiC MOSCAP using STEM-EBIC.

Journal of microscopy·2026
Same journal

The future of DXA: How AI is transforming bone health diagnostics.

Journal of microscopy·2026
Same journal

The Origins of Ploem's Filter Cube: A Pandora's Box.

Journal of microscopy·2026
Same journal

The reproducibility gap in graph neural network workflows for cell dynamics: A checklist-driven case study.

Journal of microscopy·2026
Same journal

Assessing the reproducibility of a bioimage analysis workflow characterising tissue flow in Drosophila.

Journal of microscopy·2026
Same journal

Modular training resources for bioimage analysis.

Journal of microscopy·2026
See all related articles

Electron backscattered diffraction (EBSD) reveals GaN thin film orientation and tilt relative to substrates. Cooling enhances EBSD pattern detail for improved analysis of nitride thin films.

Area of Science:

  • Materials Science
  • Solid State Physics
  • Crystallography

Background:

  • Gallium nitride (GaN), Indium Gallium Nitride (InGaN), and Aluminum Gallium Nitride (AlGaN) thin films are crucial for UV and visible optoelectronics.
  • Lattice mismatch between nitride thin films and substrates leads to variable film quality.

Purpose of the Study:

  • To investigate the utility of electron backscattered diffraction (EBSD) for analyzing nitride thin films.
  • To characterize the structural properties of GaN thin films, including orientation and tilt relative to their substrates.

Main Methods:

  • Electron Backscattered Diffraction (EBSD) was employed to analyze nitride thin films.
  • Atomic Force Microscopy (AFM) was used to assess surface morphology.
  • Experiments were conducted with varying As4 flux during plasma-assisted molecular beam epitaxy (PA-MBE) and at different sample temperatures.

Related Experiment Videos

Main Results:

  • EBSD successfully determined the relative orientation (90° rotation) between GaN thin films and sapphire substrates.
  • A tilt of 13 ± 1° towards [1010]GaN was observed in GaN films, attributed to substrate inclination.
  • Higher As4 flux during PA-MBE growth resulted in sharper EBSD patterns, correlating with improved surface morphology.
  • Cooling the GaN thin film samples enhanced the detail discernible in EBSD patterns.

Conclusions:

  • EBSD is a valuable technique for characterizing epitaxial nitride thin films, providing insights into orientation and tilt.
  • Optimizing growth conditions, such as As4 flux, and utilizing low-temperature EBSD can improve film quality and analysis.
  • This study demonstrates EBSD's potential for quality control and structural analysis in nitride-based optoelectronic device fabrication.