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Related Experiment Videos

Use of emission electron microscope for potential mapping in semiconductor microelectronics.

S A Nepijko1, N N Sedov, G Schönhense

  • 1Institute of Physics, University Mainz, Staudingerweg 7, 55099 Mainz, Germany. nepijko@mail.uni-mainz.de

Journal of Microscopy
|May 10, 2002
PubMed
Summary

Visualization of electric fields on surfaces using emission electron microscopy revealed contrast reversal in p-n junctions. This effect, dependent on aperture position, was confirmed by computer simulation.

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Area of Science:

  • Surface science
  • Electron microscopy
  • Semiconductor physics

Background:

  • Electric fields and potentials on surfaces are crucial for device performance.
  • Visualizing these microfields is challenging with conventional methods.
  • Emission electron microscopy (EEM) offers a potential solution.

Purpose of the Study:

  • To visualize and measure electric field and potential distributions on a surface.
  • To investigate the contrast mechanisms in EEM related to surface microfields.
  • To study the behavior of p-n junctions under applied voltage using EEM.

Main Methods:

  • Utilized an emission electron microscope for surface imaging.
  • Performed measurements on a voltage-biased p-n junction.

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  • Employed computer simulations to validate experimental observations.

    • Main Results:

    • Demonstrated visualization of electric field and potential distributions.
    • Observed that microfield contrast in EEM arises from electron deflection.
    • Showed that p-n junction contrast can be reversed by adjusting the contrast aperture.
    • Confirmed contrast reversal through computer simulation.

    Conclusions:

    • Emission electron microscopy is effective for mapping surface electric fields.
    • Contrast manipulation in EEM provides insights into semiconductor junction behavior.
    • Computer simulations are valuable for understanding and verifying EEM contrast phenomena.