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Related Experiment Videos

Anomalous Hall effect in ferromagnetic semiconductors.

T Jungwirth1, Qian Niu, A H MacDonald

  • 1Department of Physics, The University of Texas, Austin, Texas 78712, USA.

Physical Review Letters
|May 15, 2002
PubMed
Summary

We developed a theory for the anomalous Hall effect in ferromagnetic (III, Mn)V semiconductors. This model, based on Berry phase, accurately explains experimental data in (In, Mn)As and (Ga, Mn)As, highlighting its significance for diluted magnetic semiconductors.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Semiconductor Spintronics

Background:

  • The anomalous Hall effect (AHE) in ferromagnetic materials is crucial for spintronic applications.
  • Understanding the origins of AHE in diluted magnetic semiconductors remains a significant challenge.
  • Existing models often struggle to quantitatively explain experimental observations.

Purpose of the Study:

  • To develop a novel theoretical framework for the anomalous Hall effect in ferromagnetic (III, Mn)V semiconductors.
  • To establish a direct link between the Berry phase and AHE in these materials.
  • To validate the theory against experimental data in (In, Mn)As and (Ga, Mn)As.

Main Methods:

  • Formulation of a theory relating AHE to the Berry phase of quasiparticle wave functions.

Related Experiment Videos

  • Analysis of closed paths on the spin-split Fermi surface.
  • Quantitative comparison with experimental data from (In, Mn)As and (Ga, Mn)As.

    • Main Results:

    • The proposed theory successfully explains the anomalous Hall conductance in ferromagnetic (III, Mn)V semiconductors.
    • A strong correlation is found between the Berry phase and the anomalous Hall conductivity.
    • The theory demonstrates that the disorder-independent Berry phase contribution dominates in diluted magnetic semiconductors.

    Conclusions:

    • The Berry phase theory provides a robust explanation for the anomalous Hall effect in ferromagnetic (III, Mn)V systems.
    • This model offers unprecedented quantitative agreement with experimental data in (In, Mn)As and (Ga, Mn)As.
    • The findings suggest that the Berry phase mechanism is a dominant factor in the AHE of diluted magnetic semiconductors.