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Updated: Oct 1, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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Origin of the stability of Ge(105) on si: a new structure model and surface strain relaxation

Y Fujikawa1, K Akiyama, T Nagao

  • 1Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.

Physical Review Letters
|May 15, 2002
PubMed

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