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High-resolution transmission electron microscopy of phase formation and growth in metal-Si-Ge systems
1Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, ROC. ljchen@mse.nthu.edu.tw
Micron (Oxford, England : 1993)
|May 22, 2002
Abstract:
High-resolution transmission electron microscopy (HRTEM) in conjunction with nano-beam (NB) analysis as well as energy dispersive spectrometry analysis have been fruitfully utilized to study the interfacial reactions in the metal-Si-Ge systems. In this paper we report the results of TEM study of the phase formation and growth in Ti-Si-Ge, Cu-Si-Ge and Ni-Si-Ge systems.