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Updated: Sep 30, 2026

Quantification of Hydrogen Concentrations in Surface and Interface Layers and Bulk Materials through Depth Profiling with Nuclear Reaction Analysis
Published on: March 29, 2016
Rotation of molecular hydrogen in Si: unambiguous identification of ortho-H(2) and para-D(2)
E Elinor Chen1, Michael Stavola, W Beall Fowler
1Department of Physics, Sherman Fairchild Laboratory, Lehigh University, Bethlehem, PA 18015, USA.
Abstract:
The 3618.4 and 2642.6 cm(-1) infrared absorption lines of interstitial H(2) and D(2) in silicon have been studied under applied uniaxial stresses. The resulting splittings and their small dependence on isotope establish that H(2) in Si is a nearly free rotor and that these lines arise from vibrational transitions between rovibrational states with rotational quantum number J = 1 (T(2) in T(d) symmetry) for ortho-H(2) and para-D(2).
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