Related Experiment Videos
Manipulation of the spin memory of electrons in n-GaAs
R I Dzhioev1, V L Korenev, I A Merkulov
1A. F. Ioffe Physical Technical Institute, St. Petersburg, 194021 Russia.
Physical Review Letters
|July 5, 2002
Abstract:
We report on the optical manipulation of the electron spin relaxation time in a GaAs-based heterostructure. Experimental and theoretical study shows that the average electron spin relaxes through hyperfine interaction with the lattice nuclei, and that the rate can be controlled by electron-electron interactions. This time has been changed from 300 ns down to 5 ns by variation of the laser frequency. This modification originates in the optically induced depletion of an n-GaAs layer.