Energy dispersive spectroscopy analysis of aluminium segregation in silicon carbide grain boundaries

The aluminium distribution in polycrystalline SiC hot-pressed with aluminium, boron and carbon additives was studied using X-ray energy-dispersive spectroscopy (EDS) and transmission electron microscopy (TEM). The Al excess in homophase SiC grain boundary films was determined, taking into account dissolved Al in the SiC lattice. In the spot-EDS analysis, an electron beam probe with a calibrated diameter was formed, and the total beam-specimen interaction volume was defined, taking the beam spreading through crystalline TEM foil into consideration. EDS spectra were collected from regions containing intergranular films and adjacent matrix grains, respectively. A theoretical treatment was presented and experimental errors were estimated, with a further discussion about the effects of foil thickness. Experimental examples are given, followed by statistical EDS analyses for grain boundary films in SiC samples hot-pressed with increased amounts of Al additions. The results demonstrated a substantial Al segregation in the nanometer-wide intergranular films in all samples. Al additions higher than 3 wt% saturated the Al concentrations in SiC grains and in grain boundary films. The effect of foil thickness, and the parameters for determining the optimum incident beam diameter in the EDS analysis are discussed.