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Photothermal deflection studies of GaAs epitaxial layers
Nibu A George1, C P G Vallabhan, V P N Nampoori
1International School of Photonics, Cochin University of Science and Technology, India. nibu@ws.tn.tudelft.nl
Applied Optics
|September 6, 2002
Abstract:
Photothermal beam deflection studies were carried out with GaAs epitaxial double layers grown on semi-insulating GaAs substrates. The impurity densities in thin epitaxial layers were found to influence the effective thermal diffusivity of the entire structure.