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Carbon nanotubes as schottky barrier transistors
S Heinze1, J Tersoff, R Martel
1IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598, USA.
Physical Review Letters
|September 13, 2002
Summary
Carbon nanotube transistors function as Schottky barrier transistors, with performance controlled by contact resistance, not channel conductance. Electrode geometry significantly impacts device functionality and scaling behavior.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Carbon nanotube transistors are a promising area of research for next-generation electronics.
- Understanding their operational mechanisms is crucial for device optimization.
Purpose of the Study:
- To elucidate the fundamental operating principles of carbon nanotube transistors.
- To investigate the role of contact resistance and electrode geometry in device performance.
Main Methods:
- Theoretical calculations of transistor characteristics for idealized and realistic geometries.
- Analysis of scaling behavior.
Main Results:
- Carbon nanotube transistors operate as unconventional Schottky barrier transistors.
- Transistor action is dominated by modulation of contact resistance, not channel conductance.
- Electrode geometry is a critical factor for achieving optimal device performance.
Conclusions:
- The Schottky barrier model provides a unified explanation for experimental observations, including doping and gas adsorption effects.
- Device design must consider electrode geometry for efficient carbon nanotube transistor operation.
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