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Updated: Sep 28, 2026
15:47
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Optically driven spin memory in n-doped InAs-GaAs quantum dots
1Laboratoire de Physique de la Matière Condensée de l'Ecole Normale Supérieure, 24 rue Lhomond, 75005 Paris, France.
Physical Review Letters
|November 22, 2002
Abstract:
We show that the spin state of the resident electron in an n-doped self-assembled InAs-GaAs quantum dot can be written and read using nonresonant, circularly polarized optical pumping. A simple theoretical model is presented and accounts for the remarkable dynamics producing counterpolarized photoluminescence.
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