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Updated: Sep 21, 2026

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Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
Published on: January 9, 2014
To-and-fro motion of W5Si3 on a beta-Si3N4 substrate at elevated temperatures
1Center for Integrated Research in Science and Technology, Nagoya University, 464-8603, Japan.
Abstract:
Behavior of fine crystalline particles of W5Si3 on a beta-Si3N4 substrate at high temperatures was observed by an in situ heating experiment in a transmission electron microscope. Some of the fine particles of W5Si3 moved in a to-and-fro manner.

