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Structural evolution in amorphous silicon and germanium thin films.

L J Chen1, S L Cheng, C H Yu

  • 1Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China.

Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada
|January 21, 2003
PubMed
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Amorphous silicon and germanium thin films contain nanocrystallites. Annealing affects nanocrystallite density, with implications for medium-range order in these semiconductor materials.

Area of Science:

  • Materials Science
  • Solid State Physics
  • Nanotechnology

Background:

  • Amorphous semiconductor thin films are crucial for electronic devices.
  • Understanding their structural evolution under annealing is key to controlling properties.

Purpose of the Study:

  • To investigate the structural evolution of amorphous silicon (a-Si) and germanium (a-Ge) thin films.
  • To analyze the role of annealing on the embedded nanocrystallite density and medium-range order.

Main Methods:

  • High-resolution transmission electron microscopy (HRTEM) for direct imaging.
  • Autocorrelation function (ACF) analysis to quantify structural order.

Main Results:

  • As-deposited films exhibit a high density of nanocrystallites within an amorphous matrix.

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  • Amorphous germanium (a-Ge) shows greater structural order than amorphous silicon (a-Si).
  • Nanocrystallite density initially decreases with annealing temperature, then increases.
  • Conclusions:

    • The findings reveal a complex structural evolution in amorphous semiconductor films upon annealing.
    • Results correlate with previous observations of diminished medium-range order after annealing.