Interpretation of unexpected rocking curve asymmetry in LACBED patterns of semiconductors

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Updated: Sep 27, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

D Jacob1, A Lefebvre

  • 1Laboratoire de Structure et Propriétés de l'Etat Solide, UMR CNRS 8008, Université des Sciences et Technologies de Lille, Bâtiment C6, 59655 Villeneuve d'Ascq cedex, France. damien.jacob@univ-lille1.fr

Ultramicroscopy
|March 8, 2003
PubMed

Keywords:
electron microscopysurface strainion thinningLACBED patterns

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