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Gate-controlled spin-orbit quantum interference effects in lateral transport.

J B Miller1, D M Zumbühl, C M Marcus

  • 1Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.

Physical Review Letters
|March 14, 2003
PubMed
Summary
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Researchers controlled spin-orbit coupling in GaAs/AlGaAs 2D electron systems, observing a tunable shift from weak localization to antilocalization. This breakthrough enables precise manipulation of electron spin properties in advanced electronic devices.

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Transport

Background:

  • Spin-orbit coupling (SOC) significantly influences electron behavior in low-dimensional systems.
  • Understanding and controlling SOC is crucial for developing spintronic devices.
  • Previous theories often relied on diffusive approximations, limiting accuracy in coherent transport regimes.

Purpose of the Study:

  • To achieve in situ control of spin-orbit coupling in a clean GaAs/AlGaAs two-dimensional electron gas (2DEG).
  • To investigate the gate-tunable crossover between weak localization and antilocalization phenomena.
  • To develop a theoretical framework for 2D magnetotransport beyond the diffusive approximation, incorporating SOC.

Main Methods:

  • Fabrication of a clean GaAs/AlGaAs heterostructure to create a high-mobility 2DEG.

Related Experiment Videos

  • In situ electrical gating to tune carrier density and control SOC strength.
  • Measurement of magnetotransport properties, including magnetoresistance.
  • Development of a novel theoretical model for 2D magnetotransport with SOC, not limited by diffusive approximations.

    • Main Results:

    • Demonstrated gate-tunable crossover from weak localization to antilocalization in the 2DEG.
    • Successfully applied the developed theory to analyze experimental magnetotransport data.
    • Separately estimated Rashba and Dresselhaus contributions to SOC, revealing their gate-voltage dependence.
    • Extracted the angular dependence of spin-orbit precession at various gate voltages.

    Conclusions:

    • In situ control of SOC in coherent transport is achievable in GaAs/AlGaAs 2DEGs.
    • The developed theoretical model accurately describes 2D magnetotransport with SOC beyond the diffusive limit.
    • This work provides a pathway for precise engineering of spin properties in future electronic and spintronic applications.