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Related Experiment Videos

Wave-front correction methods for extreme-ultraviolet multilayer reflectors.

Mandeep Singh1, Matthieu F Bal, Joseph J M Braat

  • 1Optics Research Group, Faculty of Applied Sciences, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands.

Applied Optics
|April 10, 2003
PubMed
Summary
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Correcting wavefront distortions in thin-film interference coatings is possible by adjusting multilayer periods. Modifying molybdenum-silicon (Mo/Si) multilayer coatings can induce effective phase changes, enhancing wave-front correction for advanced imaging.

Area of Science:

  • Optics and Photonics
  • Materials Science
  • Thin-film Technology

Background:

  • Surface figure errors in optical coatings can distort reflected wavefronts.
  • Multilayer (ML) interference coatings are crucial for controlling light reflection characteristics.
  • Extreme-ultraviolet (EUV) lithography demands precise control over wavefronts.

Purpose of the Study:

  • To investigate the theoretical possibility of correcting wavefront distortions using ML coatings.
  • To quantify the phase change induced by altering ML periods.
  • To explore applications in phase-shifting masks for subwavelength imaging.

Main Methods:

  • Theoretical analysis of thin-film interference coatings.
  • Modeling phase changes induced by adding or removing ML periods.

Related Experiment Videos

  • Simulation of molybdenum-silicon (Mo/Si) ML coatings at 13.4 nm wavelength.
  • Main Results:

    • Removing or depositing a single Mo/Si ML period induces an effective phase change of 0.043π.
    • Wave-front shift magnitude can be amplified using multicomponent MLs.
    • The shift in the effective reflection surface contributes to the phase change.

    Conclusions:

    • Adjusting ML periods offers a method to correct wavefront distortions caused by surface errors.
    • Optimized multicomponent MLs can enhance phase change for improved correction.
    • This approach shows potential for developing novel phase-shifting masks for subwavelength imaging.