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Hall effect in nested antiferromagnets near the quantum critical point
M R Norman1, Qimiao Si, Ya B Bazaliy
1Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
Physical Review Letters
|April 12, 2003
Summary
The Hall coefficient sharply rises with antiferromagnetism due to Fermi surface changes. This finding explains recent observations in vanadium-doped chromium, linking Hall effect to magnetic ordering.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Solid State Physics
Background:
- Fermi surface nesting can drive antiferromagnetism.
- The Hall coefficient is a sensitive probe of electronic structure.
- Recent experiments show an abrupt Hall coefficient increase in V-doped Cr.
Purpose of the Study:
- Investigate the Hall coefficient behavior in antiferromagnetic materials driven by Fermi surface nesting.
- Explain the observed abrupt increase in Hall coefficient in vanadium-doped chromium.
Main Methods:
- Theoretical investigation of Hall coefficient in antiferromagnetic systems.
- Analysis of Fermi surface modifications upon magnetic ordering.
Main Results:
- The Hall coefficient is predicted to increase abruptly at the onset of antiferromagnetism.
- This increase is attributed to the removal of flat Fermi surface sections.
- A scaling relationship for the Hall coefficient is derived: R_H ∝ ρ_res²/n_imp.
Conclusions:
- The proposed mechanism successfully explains the experimental observations in vanadium-doped chromium.
- The Hall coefficient provides a direct link to Fermi surface topology changes during magnetic transitions.
- The derived scaling law offers a predictive tool for understanding transport properties in related materials.