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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Attractive migration and coalescence: a significant process in the coarsening of TiSi2 islands on the Si(111) surface
1Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202, USA.
Abstract:
The dynamics and coarsening of TiSi2 islands on Si(111) surfaces are studied in real time with photoelectron emission microscopy. A significant fraction of events are observed in which nearby islands move attractively toward each other and subsequently coalesce. It is proposed that attractive island migration is due to the growth-decay flow of the island edges driven by a nonuniform surface concentration around the islands. The local surface concentration is induced by the neighboring islands. This coarsening mechanism should significantly affect the evolution of the island distribution.
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