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Vacancy defects as compensating centers in Mg-doped GaN
S Hautakangas1, J Oila, M Alatalo
1Laboratory of Physics, Helsinki University of Technology, FIN-02150 Espoo, Finland.
Physical Review Letters
|April 12, 2003
Summary
Positron annihilation spectroscopy identified native V(N)-Mg(Ga) complexes in Mg-doped GaN. These defects dissociate during annealing, impacting electrical compensation and p-type conductivity activation.
Area of Science:
- Materials Science
- Solid State Physics
- Semiconductor Physics
Background:
- Mg-doped Gallium Nitride (GaN) is crucial for electronic devices.
- Understanding native defects is key to optimizing GaN properties.
- Previous theoretical calculations predicted abundant vacancy defects.
Purpose of the Study:
- To identify native defects in Mg-doped GaN.
- To investigate the behavior of these defects during postgrowth annealing.
- To correlate defect complexes with electrical properties.
Main Methods:
- Positron annihilation spectroscopy (PAS) was employed.
- Mg-doped GaN samples were subjected to postgrowth annealing at 500-800°C.
Main Results:
- V(N)-Mg(Ga) complexes were identified as native defects.
- These complexes dissociate upon annealing between 500-800°C.
- The identified defects influence both electrical compensation and p-type conductivity.
Conclusions:
- V(N)-Mg(Ga) complexes are confirmed native defects in Mg-doped GaN.
- Defect dissociation during annealing is linked to p-type conductivity activation.
- The findings support theoretical predictions of abundant vacancy defects in GaN.