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Updated: Aug 12, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

N-K ELNES study of anisotropy effects in hexagonal AlN

G Radtke1, T Epicier, P Bayle-Guillemaud

  • 1GEMPPM, umr CNRS 5510, INSA de Lyon, 20 av. Albert Einstein, F-69621 Villeurbanne Cedex, France. guillaume.radtke@insa-lyon.fr

Journal of Microscopy
|April 16, 2003
PubMed

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