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Electron energy-loss spectroscopy study of thin film hafnium aluminates for novel gate dielectrics

S Stemmer¹, Z Q Chen, W J Zhu

¹Materials Department, University of California, Santa Barbara 93106-5050, USA. stemmer@mrl.ucsb.edu

Journal of Microscopy

|April 16, 2003

Abstract:

We have used conventional high-resolution transmission electron microscopy and electron energy-loss spectroscopy (EELS) in scanning transmission electron microscopy to investigate the microstructure and electronic structure of hafnia-based thin films doped with small amounts (6.8 at.%) of Al grown on (001) Si. The as-deposited film is amorphous with a very thin (approximately 0.5 nm) interfacial SiOx layer. The film partially crystallizes after annealing at 700 degrees C and the interfacial SiO2-like layer increases in thickness by oxygen diffusion through the Hf-aluminate layer and oxidation of the silicon substrate. Oxygen K-edge EELS fine-structures are analysed for both films and interpreted in the context of the films' microstructure. We also discuss valence electron energy-loss spectra of these ultrathin films.

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