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Updated: Sep 26, 2026

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
Published on: December 4, 2014
Equilibrium model of bimodal distributions of epitaxial island growth
Robert E Rudd1, G A D Briggs, A P Sutton
1Lawrence Livermore National Laboratory, Condensed Matter Physics Division, L-045, Livermore, California 94551, USA. robert.rudd@llnl.gov
Abstract:
We present a nanostructure diagram for use in designing heteroepitaxial systems of quantum dots. The nanostructure diagram is computed using a new equilibrium statistical physics model and predicts the island size and shape distributions for a range of combinations of growth temperature and amount of deposited material. The model is applied to Ge on Si(001), the archetype for bimodal island growth, and the results compare well with data from atomic force microscopy of Ge/Si islands grown by chemical vapor deposition.
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