Related Experiment Videos
Breakdown transients in ultrathin gate oxides: transition in the degradation rate
S Lombardo1, J H Stathis, B P Linder
1Consiglio Nazionale delle Ricerche (CNR)-Istituto per la Microelettronica e Microsistemi (IMM), Sezione di Catania, Stradale Primosole, 50, 95121 Catania, Italy.
Physical Review Letters
|May 7, 2003
Abstract:
We report a sharp threshold at 4 V in the growth rate of breakdown spots in thin films of SiO2 on silicon. This provides some of the first information concerning the electronic structure of the breakdown spot.