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Mirror domain structures induced by interlayer magnetic wall coupling.

W S Lew1, S P Li, L Lopez-Diaz

  • 1Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, United Kingdom.

Physical Review Letters
|June 6, 2003
PubMed
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Giant magnetoresistance (GMR) spin-valve structures show a resistance drop during NiFe reversal. This is due to NiFe domain walls being trapped by Co stray fields, creating a mirror domain structure.

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Magnetism

Background:

  • Giant magnetoresistance (GMR) is a quantum mechanical effect observed in multilayer thin-film structures.
  • Spin-valve structures utilize GMR for magnetic field sensing applications.
  • Understanding domain wall behavior is crucial for optimizing GMR device performance.

Purpose of the Study:

  • To investigate the magnetic domain behavior in NiFe/Cu/Co spin-valve structures during magnetic field reversal.
  • To elucidate the mechanism behind the observed resistance drop in GMR measurements.
  • To explore the interlayer coupling effects on magnetic domain alignment.

Main Methods:

  • Fabrication of NiFe/Cu/Co continuous film spin-valve structures (approx. 10 x 10 mm²).

Related Experiment Videos

  • Performing giant magnetoresistance (GMR) measurements under varying applied magnetic fields.
  • Analysis of magnetic domain alignment and reversal dynamics.

    • Main Results:

    • A sudden, significant drop in resistance to its minimum value was observed during NiFe magnetic domain reversal.
    • Complete alignment of NiFe magnetic domains with Co domains was achieved at specific applied field strengths.
    • The phenomenon was attributed to the trapping of NiFe domain walls by magnetostatic interactions with Co domain-wall stray fields.

    Conclusions:

    • Interlayer domain-wall coupling plays a critical role in the magnetic behavior of NiFe/Cu/Co trilayers.
    • This coupling induces a mirror domain structure, aligning NiFe domains with Co domains.
    • The findings provide insights into controlling magnetic domain configurations for enhanced GMR device functionality.