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Quasi-phase-matched second-harmonic generation in a GaAs/AlAs superlattice waveguide by ion-implantation-induced
K Zeaiter1, D C Hutchings, R M Gwilliam
1Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, Scotland, UK.
Abstract:
We report type I second-harmonic generation by use of first-order quasi-phase matching in a GaAs/AlAs symmetric superlattice structure with femtosecond fundamental pulses at 1.55 microm. Periodic spatial modulation of the bulklike second-order susceptibility chi(zxy)(2) was achieved with quantum-well intermixing for which the group III vacancies were created by As+-ion implantation. A narrow second-harmonic bandwidth of approximately 0.9 nm (FWHM) with an average power of approximately 1.5 microW was detected, corresponding to an internal conversion efficiency of approximately 0.06%, which was considerably limited by the spectral bandwidth of the fundamental.