The CsLnMSe3 semiconductors (Ln = rare-earth element, Y; M = Zn, Cd, Hg)
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Published on: May 11, 2019
Kwasi Mitchell1, Fu Qiang Huang, Adam D McFarland
1Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208-3113, USA.
Abstract:
CsLnCdSe(3) (Ln = Ce, Pr, Sm, Gd, Tb, Dy, Y) and CsLnHgSe(3) (Ln = La, Ce, Pr, Nd, Sm, Gd, Y) have been synthesized at 1123 K. These isostructural materials crystallize in the layered KZrCuS(3) structure type in the orthorhombic space group Cmcm and are group X extensions of the previously characterized Zn compounds. The structure is composed of two-dimensional [LnMSe(3)] layers that stack perpendicular to [010] and are separated by layers of face- and edge-sharing CsSe(8) bicapped trigonal prisms. Because there are no Se-Se bonds in the structure of CsLnMSe(3) (M = Zn, Cd, Hg), the formal oxidation states of Cs/Ln/M/Se are 1+/3+/2+/2-. CsSmHgSe(3) does not adhere to the Curie-Weiss law, whereas CsCeHgSe(3) and CsGdHgSe(3) are Curie-Weiss paramagnets with micro (eff) values of 2.77 and 7.90 micro (B), corresponding well with the theoretical values of 2.54 and 7.94 micro (B) for Ce(3+) and Gd(3+), respectively. Single-crystal optical absorption measurements were performed with polarized light perpendicular to the (010) and (001) crystal faces of these materials. The band gaps of the (010) crystal faces range from 1.94 eV (CsCeHgSe(3)) to 2.58 eV (CsYCdSe(3)) whereas those of the (001) crystal faces span the range 2.37 eV (CsSmHgSe(3)) to 2.54 eV (CsYCdSe(3) and CsYHgSe(3)). The largest band gap variation between crystal faces is 0.06 eV for CsYCdSe(3). Theoretical calculations for CsYMSe(3) indicate that these materials are direct band gap semiconductors whose colors and optical band gaps are dependent upon the orbitals of Y, M, and Se.
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