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The Role of Fabric in Frictional Properties of Phyllosilicate-Rich Tectonic Faults

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Stacking-fault nucleation on Ir(111).

Carsten Busse¹, Celia Polop, Michael Müller

¹Physikalisches Institut, RWTH Aachen, D-52056 Aachen, Germany. busse@physik.rwth-aachen.de

Physical Review Letters

|August 9, 2003

Summary

This summary is machine-generated.

Scanning tunneling microscopy reveals that iridium (Ir) crystal growth on Ir(111) surfaces forms stacking faults. An atomistic model explains this phenomenon by adatom clusters occupying hexagonal close-packed (hcp) sites.

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Area of Science:

Surface science
Materials science
Condensed matter physics

Background:

Homoepitaxial growth is crucial for thin film fabrication.
Understanding crystal stacking sequences (fcc vs. hcp) is key to controlling material properties.
Stacking faults can significantly alter surface and bulk material characteristics.

Purpose of the Study:

To investigate the nucleation and growth mechanisms of stacking faults during Ir(111) homoepitaxy.
To develop an atomistic model explaining the formation of stacking faults based on experimental observations.
To validate the model using independent experimental parameters and assess its general applicability.

Main Methods:

Variable temperature scanning tunneling microscopy (STM) was employed to observe island formation.
Analysis of island nucleation and growth as a function of deposition temperature.
Field ion microscopy (FIM) was used to derive independent parameters for model validation.

Main Results:

Islands nucleate and grow in both regular face-centered cubic (fcc) and faulted hexagonal close-packed (hcp) stacking configurations.
Stacking fault formation is linked to the behavior of mobile adatom clusters occupying hcp sites.
The developed atomistic model accurately describes the experimental results for Ir(111) growth.

Conclusions:

The study provides a detailed atomistic understanding of stacking-fault formation during Ir(111) homoepitaxy.
Mobile adatom clusters occupying hcp sites play a critical role in the growth of metastable stacking-fault islands.
The proposed model is validated and expected to be applicable to other surface systems.