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Updated: Sep 20, 2026

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
Published on: December 3, 2013
Direct measurement of the spin polarization of the magnetic semiconductor (Ga,Mn)As
J G Braden1, J S Parker, P Xiong
1MARTECH and Department of Physics, Florida State University, Tallahassee, Florida 32306, USA.
Abstract:
We have carried out a direct measurement of the degree of spin polarization (P) of the magnetic semiconductor Ga1-xMnxAs using Andreev reflection spectroscopy. Analyses of the conductance spectra of high transparency Ga(0.95)Mn(0.05)As/Ga junctions consistently yield an intrinsic value for P greater than 85%. Our experiments also revealed an extreme sensitivity of the measured spin polarization to the nature and quality of the interface for this material.
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