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Ballistic conduction in multiwalled carbon nanotubes.

Claire Berger1, Philippe Poncharal, Yan Yi

  • 1School of Physics, Georgia Institute of Technology, Atlanta, Georgia, USA.

Journal of Nanoscience and Nanotechnology
|August 12, 2003
PubMed
Summary
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Electrical transport in multiwalled carbon nanotubes is ballistic at room temperature, with exceptionally long electron mean free paths. This property surpasses that of metals, highlighting their potential for advanced electronic applications.

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Understanding electrical transport properties of carbon nanotubes (CNTs) is crucial for their application in nanoelectronics.
  • Previous studies have indicated variable electrical characteristics of CNTs, often attributed to processing-induced damage.

Purpose of the Study:

  • To investigate the intrinsic electrical transport behavior of multiwalled carbon nanotubes (MWCNTs) at room temperature.
  • To determine the mean free path (MFP) of electrons in MWCNTs and compare it with conventional conductors.

Main Methods:

  • Electrical transport measurements performed on MWCNTs in air and within a transmission electron microscope.
  • Contacting the nanotube with liquid metal to measure resistance and current-voltage characteristics.

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  • In situ electron microscopy to assess nanotube integrity and identify conducting/non-conducting fractions.

    • Main Results:

    • Ballistic electrical transport observed in MWCNTs at room temperature with MFPs on the order of tens of microns (up to 200 microns measured).
    • Resistance per unit length (Rt) of 31 ± 61 Ω/μm and contact resistance (Rc) of 165 ± 55 Ω·μm determined.
    • MWCNTs exhibit high current carrying capacity (up to 1 mA, ~10^9 A/cm²) and survival.
    • Observation of non-conducting nanotubes, consistent with the presence of semiconducting CNTs.

    Conclusions:

    • Clean, undamaged arc-produced MWCNTs exhibit ballistic transport with exceptionally long MFPs, significantly exceeding those of metals.
    • Processing-induced damage likely explains discrepancies in electrical transport measurements reported in other studies.
    • The long MFP is a key property making MWCNTs highly promising for future electronic devices.