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Related Experiment Videos

[Study on pollution for the photoelectronic material InP].

Jian-cheng Xu1, Xiao-ping Ding, Ding-qin Chen

  • 1Department of Physics, Capital Normal University, Beijing 100037, China.

Guang Pu Xue Yu Guang Pu Fen Xi = Guang Pu
|August 27, 2003
PubMed
Summary

Analysis of indium phosphide (InP) crystal faces (100) and (111) revealed silicon contamination. This predominant silicon pollution impacts the photoelectronic material

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Semiconductor Physics

Context:

  • Indium phosphide (InP) is a critical photoelectronic material.
  • Characterization of crystal faces (100) and (111) is essential for understanding material properties.
  • Photoluminescence and mass spectrum analyses are key techniques for material evaluation.

Purpose:

  • To analyze the crystal faces (100) and (111) of InP using mass spectrum.
  • To perform photoluminescence analysis on the (100) crystal face of InP.
  • To determine Hall coefficient, charge carrier concentration, and Hall mobility.

Summary:

  • Mass spectrum analysis was conducted on InP crystal faces (100) and (111).
  • Photoluminescence analysis was performed on the InP (100) crystal face.
  • Hall effect measurements indicated that silicon is the predominant impurity.

Impact:

  • The study identifies silicon as a major contaminant in InP.
  • Understanding impurity effects is crucial for optimizing InP-based photoelectronic devices.
  • Results guide purification strategies for high-performance InP materials.

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