[Influence of oxygen content on photoluminescence from a-SiOxNy thin films]

Amorphous SiOxNy thin films were deposited by PECVD technique. Strong photoluminescence bands centered at about 340 and 600 nm and peaks centered at 365, 375, 380, 735 and 745 nm from as prepared samples were observed at room temperature. Influence of partial pressure of H2 during deposition was investigated. The results show that strength of PL and oxygen content increase with H2 partial pressure decrease, the position of PL peaks does not change, and the central position of PL bands shifts. The possible origin of PL and mechanism of the variations are discussed according to experimental results.