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Efficient laser operation of an Yb:S-FAP crystal at 985 nm
Sylvie Yiou1, François Balembois, Kathleen Schaffers
1Laboratoire Charles Fabry de l'Institut d'Optique, Unité Mixte de Recherche 8501 du Centre National de la Recheche Scientifique, Centre Universitaire Paris XI, Bâtiment 503, 91403 Orsay, France. sylvie.yiou@iota.u-psud.fr
Applied Optics
|September 4, 2003
Abstract:
We have obtained three-level cw laser operation at 985 nm with a Yb-doped S-FAP bulk crystal pumped by a Ti:sapphire laser. An output power of 250 mW for an incident pump power of 1.45 W has been achieved, which is the highest cw output power ever obtained, to our knowledge, at this wavelength with a Yb-doped crystal. The experimental results are in good agreement with the numerical model that we have developed.