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Updated: Jul 26, 2026

Assessment of Boron Doped Diamond Electrode Quality and Application to In Situ Modification of Local pH by Water Electrolysis
Published on: January 6, 2016
Design of shallow donor levels in diamond by isovalent-donor coupling
1National Renewable Energy Laboratory, Golden, Colorado 80401, USA.
Abstract:
Using the first-principles pseudopotential method, we have studied simultaneous isovalent and n-type doping in diamond. We show that Si induces fully occupied isovalent levels near the valence band maximum. The Si levels interact with N donor levels, making them much shallower. The donor transition energy level of the N + 4Si defect complexes is found to be 0.09 eV below the conduction band minimum, which is the shallowest level found thus far for this system. The binding energy of the N + 4Si complex is also large enough to insure its stability.
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