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Lateral and longitudinal coupled waveguides in semiconductor lasers
1Department of Electrical Engineering, Microelectronics Center and Solid State Institute, Technion, Haifa 32000, Israel. orsk@tx.technion.ac.il
Optics Letters
|November 1, 2003
Summary
This study analyzes semiconductor lasers with internal mirrors, revealing how they modulate gain spectra. The findings suggest this coupled-cavity effect explains observed spectra in Gallium Nitride (GaN) lasers.
Area of Science:
- Optics and Photonics
- Semiconductor Physics
Background:
- Semiconductor lasers are crucial optoelectronic devices.
- Understanding their spectral characteristics is vital for performance optimization.
Purpose of the Study:
- To analyze a semiconductor laser design incorporating two laterally coupled waveguides.
- To investigate the effect of an internal partially reflecting surface (mirror) within one waveguide.
Main Methods:
- Theoretical analysis of a coupled-waveguide semiconductor laser system.
- Modeling the influence of an internal mirror on longitudinal coupling.
- Examining the modulation of Fabry-Perot modes in the gain spectrum.
Main Results:
- The internal mirror introduces longitudinal coupling into the laser system.
- The gain required for the lasing threshold shows modulation.
- The modulation periodicity is dependent on the internal mirror's longitudinal position.
Conclusions:
- The combined coupled-cavity effect is proposed as an explanation for observed gain spectra.
- This model may specifically account for spectral features in Gallium Nitride (GaN) lasers.