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Updated: Aug 27, 2026

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
Published on: November 9, 2015
Properties of liquid silicon observed by time-resolved x-ray absorption spectroscopy
S L Johnson1, P A Heimann, A M Lindenberg
1Department of Physics, University of California, Berkeley, California 94720, USA. Steve.Johnson@mailaps.org
Abstract:
Time-resolved x-ray spectroscopy at the Si L edges is used to probe the electronic structure of an amorphous Si foil as it melts following absorption of an ultrafast laser pulse. Picosecond temporal resolution allows observation of the transient liquid phase before vaporization and before the liquid breaks up into droplets. The melting causes changes in the spectrum that match predictions of molecular dynamics and ab initio x-ray absorption codes.
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