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Updated: Aug 30, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Comment on "Identification of lattice vacancies on the two sublattices of SiC"
J Kuriplach1, G Brauer, W Anwand
1Department of Low Temperature Physics, Charles University, V Holesovickách 2, CZ-180 00 Prague 8, Czech Republic.
No abstract available in PubMed .
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