Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Videos

Four-dimensional microscopy of defects in integrated circuits.

Jelda Jayne Miranda1, Caesar Saloma

  • 1National Institute of Physics, University of the Philippines, Diliman, Quezon City, Philippines 1101.

Applied Optics
|December 3, 2003
PubMed
Summary

This study introduces a novel four-dimensional microscopy technique combining laser-scanning confocal reflectance microscopy and one-photon optical-beam-induced current (1P-OBIC) imaging. This method accurately maps 3D defect structures and material damage in integrated circuits with minimal cost and efficient processing.

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Prior individual training and self-organized queuing during group emergency escape of mice from water pool.

PloS one·2015
Same author

Colored object recognition by digital holography and a hydrogen Raman shifter.

Optics express·2009
Same author

Spectral microthermography for component discrimination and hot spot identification in integrated circuits.

Optics express·2009
Same author

Classification of coral reef images from underwater video using neural networks.

Optics express·2009
Same author

Fluorescence spectrum estimation using multiple color images and minimum negativity constraint.

Optics express·2009
Same author

Direction-sensitive subwavelength displacement measurements at diffraction-limited spatial resolution.

Optics letters·2007

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Microscopy

Background:

  • Defects in integrated circuits can significantly impact device performance and reliability.
  • Existing microscopy techniques often struggle to provide comprehensive 3D structural and material information about these defects.
  • Characterizing defect origins and extent is crucial for improving semiconductor manufacturing processes.

Purpose of the Study:

  • To develop and demonstrate a novel four-dimensional microscopy technique for defect analysis in integrated circuits.
  • To combine laser-scanning confocal reflectance microscopy with one-photon optical-beam-induced current (1P-OBIC) imaging for enhanced defect characterization.
  • To provide accurate 3D structural and material information of defects, including damaged semiconductor, metal, and dielectric components.

Related Experiment Videos

Main Methods:

  • Integration of laser-scanning confocal reflectance microscopy with one-photon optical-beam-induced current (1P-OBIC) imaging.
  • Utilizing a single focused probe beam to simultaneously acquire both reflectance and 1P-OBIC signals.
  • Development of a computationally efficient image reconstruction procedure for 4D defect mapping.
  • Application of the technique to defects induced by electrical overstress and unwanted generation centers.

Main Results:

  • Demonstration of accurate four-dimensional (4D) microscopy for defect analysis in integrated circuits.
  • Simultaneous acquisition of 1P-OBIC and reflectance signals from the same illuminated spot, enabling efficient data collection.
  • Accurate determination of the 3D structure of defects and identification of damaged materials (metal, semiconductor, dielectric).
  • Revealed exclusive 3D distributions of semiconductor and metal sites, highlighting defect features not discernible with individual imaging methods.

Conclusions:

  • The combined confocal reflectance and 1P-OBIC microscopy technique offers a powerful tool for detailed 4D defect analysis in integrated circuits.
  • The method provides superior defect characterization compared to standalone confocal or 1P-OBIC imaging.
  • Minimal hardware cost and efficient image processing make this technique practical for widespread adoption in semiconductor failure analysis and research.