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Optical nonreciprocal devices with a silicon guiding layer fabricated by wafer bonding
Hideki Yokoi1, Tetsuya Mizumoto, Yuya Shoji
1Department of Electrical and Electronic Engineering, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan. yokoi@wave.pe.titech.ac.jp
Abstract:
Optical nonreciprocal devices with a silicon guiding layer fabricated by wafer bonding are proposed. The optical nonreciprocal devices are composed of a magneto-optic waveguide with a magnetic garnet/Si/SiO2 structure. Nonreciprocal characteristics are obtained by an evanescent field penetrating into the upper magnetic garnet cladding layer. Several kinds of the optical nonreciprocal device are investigated with the magneto-optic waveguide and designed at a wavelength of 1.55 microm. As a preliminary experiment, wafer bonding between Gd3Ga5O12 and Si was studied. Wafer bonding was successfully achieved with heat treatment at 220 degrees C in H2 ambient.